IRGP4630D-EPbf - Infineon

IRGP4630D-EPbf IGBT

VCES = 600V IC = 30A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 18A Applications • Industrial Motor Drive • Inverters • UPS • Welding IR IGBT IRGB4630DPbF IRGIB4630DPbF IRGP4630D(-E)PbF IRGS4630DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C C E C G IRGB4630DPbF TO-220AB C GC E IRGP4630DPbF TO-247AC .

Features

Benefits Low VCE(ON) and switching losses High efficiency in a wide range of applications and switching frequencies Square RBSOA and maximum junction temperature 175°C Improved reliability due to rugged hard switching performance and high power capability Positive VCE (ON) temperature coefficient of parameters and tight distribution Excellent current sharing in parallel operation 5µs Short Circuit SOA Enables short circuit protection scheme Lead-Free, RoHS Compliant Environmentally friendly Base part number IRGB4630DPbF IRGIB4630DPbF IRGP4630DPbF IRGP4630D-EPbF IRGS4630DPbF P.