Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEX.
g surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ24NL) is available for lowprofile applications. D 2 P ak T O -26 2 Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Opera.
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263(D2PAK) packaging ·Surface mount ·High speed switching ·100% avala.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFZ24NS |
International Rectifier |
Power MOSFET | |
2 | IRFZ24NS |
TRANSYS |
Power MOSFET | |
3 | IRFZ24NS |
VBsemi |
N-Channel MOSFET | |
4 | IRFZ24N |
NXP |
N-channel enhancement mode TrenchMOS transistor | |
5 | IRFZ24N |
International Rectifier |
Power MOSFET | |
6 | IRFZ24N |
ART CHIP |
Power MOSFET | |
7 | IRFZ24N |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
8 | IRFZ24NL |
International Rectifier |
Power MOSFET | |
9 | IRFZ24NL |
TRANSYS |
Power MOSFET | |
10 | IRFZ24NLPBF |
International Rectifier |
HEXFET Power MOSFET | |
11 | IRFZ24NLPbF |
INCHANGE |
N-Channel MOSFET | |
12 | IRFZ24NPBF |
International Rectifier |
Power MOSFET |