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·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE.
·Avalanche Rugged Technology
·Rugged Gate Oxide Technology
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage-Continuous
ID Drain Current-Continuous
IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃
TJ Max. Operating Junction Temperature Tstg Storage Temperature
VALUE UNIT
400 V
±30
V
2.8 A
13.2 A
33 W
-55~150 ℃
-55~150 ℃
THERMAL CHARACTERISTICS
SY.
IRFS720A - Samsung
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRFS720B |
Fairchild |
400V N-Channel MOSFET |
|
| 2 | IRFS710A |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | IRFS710A |
Fairchild Semiconductor |
Power MOSFET |
|
| 4 | IRFS710B |
Fairchild |
400V N-Channel MOSFET |
|
| 5 | IRFS730 |
LZG |
N-Channel MOSFET |
|
| 6 | IRFS730 |
BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET |
|
| 7 | IRFS730A |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 8 | IRFS730A |
Fairchild Semiconductor |
Advanced Power MOSFET |
|
| 9 | IRFS730B |
Fairchild |
400V N-Channel MOSFET |
|
| 10 | IRFS740 |
BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET |
|
| 11 | IRFS740 |
LZG |
N-CHANNEL MOSFET |
|
| 12 | IRFS740A |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|