These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited.
•
•
•
•
•
• 9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 22 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
G G DS
TO-220
IRF Series
GD S
TO-220F
IRFS Series
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
IRF630B 200 9.0 5.7 36 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
IRFS630B 9.0
* 5.7
* 36
* 160 9.0 7.2 5.5
Units V A A .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFS630 |
TAITRON |
200V/9A POWER MOSFET | |
2 | IRFS630 |
BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET | |
3 | IRFS630 |
Samsung |
N-Channel Power MOSFET | |
4 | IRFS630A |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
5 | IRFS630A |
Fairchild |
Advanced Power MOSFET | |
6 | IRFS631 |
Samsung |
N-Channel Power MOSFET | |
7 | IRFS634 |
TAITRON |
250V/5.5A N-Channel Power MOSFET | |
8 | IRFS634 |
LZG |
N-Channel MOSFET | |
9 | IRFS634 |
BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET | |
10 | IRFS634A |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
11 | IRFS634A |
Samsung Electronics |
Advanced Power MOSFET | |
12 | IRFS634B |
Fairchild |
250V N-Channel MOSFET |