IRFR3707ZPbF - Infineon

IRFR3707ZPbF Power MOSFET

Applications  High Frequency Synchronous Buck Converters for Computer Processor Power  High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits  Very Low RDS(on) at 4.5V VGS  Ultra - Low Gate Impedance  Fully Characterized Avalanche Voltage and Current  Lead-Free IRFR3707ZPbF IRFU3707ZPbF HEXFET®.

Features

mum Power Dissipation Linear Derating Factor TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance Symbol RJC RJA RJA Parameter Junction-to-Case Junction-to-Ambient ( PCB Mount)  Junction-to-Ambient Notes  through  are on page 2. Max. 30 ± 20 56 39 220 50 25 0.33 -55 to + 175 300 Typ.
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  – Max. 3.0 50 110 Units V V A W W W/°C °C Units °C/W 1 2016-5-31 IRFR/U3707ZPbF Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS V(BR)DSS/TJ Drain-to-Source Breakdown Voltage Bre.