Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 Ω (Typ.) IRFR/U120A BVDSS = 100 V RDS(on) = 0.2 Ω ID = 8.4 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute.
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 Ω (Typ.) IRFR/U120A BVDSS = 100 V RDS(on) = 0.2 Ω ID = 8.4 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetit.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFR120 |
International Rectifier |
POWER MOSFET | |
2 | IRFR120 |
Intersil Corporation |
N-Channel Power MOSFETs | |
3 | IRFR120 |
Vishay Siliconix |
Power MOSFET | |
4 | IRFR1205 |
International Rectifier |
Power MOSFET | |
5 | IRFR1205 |
INCHANGE |
N-Channel MOSFET | |
6 | IRFR1205PBF |
International Rectifier |
Power MOSFET | |
7 | IRFR120N |
International Rectifier |
Power MOSFET | |
8 | IRFR120N |
INCHANGE |
N-Channel MOSFET | |
9 | IRFR120NPBF |
International Rectifier |
Fast Switching | |
10 | IRFR120TR |
International Rectifier |
POWER MOSFET | |
11 | IRFR120Z |
International Rectifier |
AUTOMOTIVE MOSFET | |
12 | IRFR120Z |
INCHANGE |
N-Channel MOSFET |