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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP260M，IIRFP260M ·FEATURES ·Static drain-source on-resistance: RDS(on)≤40mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Speed Power Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VAL.
·Static drain-source on-resistance:
RDS(on)≤40mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·High Speed Power Switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
200
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
50
IDM
Drain Current-Single Pulsed
200
PD
Total Dissipation @TC=25℃
300
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rt.
IRFP260M - Infineon
V(BR)DSS RDS(on) max. ID IRFP260MPbF IR MOSFET™ 200V 0.04 50A IR MOSFET™ technology from Infineon utilizes advanced .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRFP260 |
IXYS Corporation |
Standard Power MOSFET |
|
| 2 | IRFP260 |
Vishay Siliconix |
Power MOSFET |
|
| 3 | IRFP260 |
International Rectifier |
Power MOSFET |
|
| 4 | IRFP260 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IRFP260MPbF |
Infineon |
IR MOSFET |
|
| 6 | IRFP260MPBF |
International Rectifier |
Power MOSFET |
|
| 7 | IRFP260N |
International Rectifier |
Power MOSFET |
|
| 8 | IRFP260N |
INCHANGE |
N-Channel MOSFET |
|
| 9 | IRFP260NPBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 10 | IRFP260NPBF |
INCHANGE |
N-Channel MOSFET |
|
| 11 | IRFP260PBF |
International Rectifier |
Power MOSFET |
|
| 12 | IRFP264 |
International Rectifier |
Power MOSFET |
|