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IRFP140N - International Rectifier

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IRFP140N Power MOSFET

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide v.

Features

VGS @ 10V… Continuous Drain Current, VGS @ 10V… Pulsed Drain Current … Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ‚… Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ… Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 33 23 110 140 0.91 ±20 300 16 14 5.0 -55 to + 175 300 (1.6mm from case) 10 lbf
•in (1.1N
•m) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Jun.

The same part from a different manufacturer

Datasheet IRFP140N - Intersil Corporation IRFP140N

IRFP140N TM Data Sheet March 2000 File Number 4841 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET Packaging JEDEC TO-.

Datasheet IRFP140N - INCHANGE IRFP140N

isc N-Channel MOSFET Transistor IRFP140N,IIRFP140N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤52mΩ ·Enhance.

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