Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide v.
VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy
Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Max.
33 23 110 140 0.91 ±20 300 16 14 5.0 -55 to + 175 300 (1.6mm from case) 10 lbf
•in (1.1N
•m)
Units
A W W/°C V mJ A mJ V/ns °C
Thermal Resistance
Parameter
RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Jun.
IRFP140N TM Data Sheet March 2000 File Number 4841 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET Packaging JEDEC TO-.
isc N-Channel MOSFET Transistor IRFP140N,IIRFP140N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤52mΩ ·Enhance.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFP140 |
Vishay |
Power MOSFET | |
2 | IRFP140 |
Fairchild Semiconductor |
N-channel Power MOSFET | |
3 | IRFP140 |
International Rectifier |
Power MOSFET | |
4 | IRFP140 |
INCHANGE |
N-Channel MOSFET | |
5 | IRFP1405 |
International Rectifier |
AUTOMOTIVE MOSFET | |
6 | IRFP1405 |
INCHANGE |
N-Channel MOSFET | |
7 | IRFP1405PBF |
International Rectifier |
Power MOSFET | |
8 | IRFP140A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
9 | IRFP140NPBF |
International Rectifier |
HEXFET Power MOSFET | |
10 | IRFP140PBF |
International Rectifier |
Preferred for commercail-industrial applications | |
11 | IRFP140R |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
12 | IRFP141R |
Inchange Semiconductor |
N-Channel MOSFET Transistor |