IRFN5210 - Semelab

IRFN5210 P-Channel Power MOSFET

IRFN5210 MECHANICAL DATA Dimensions in mm (inches) 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) P–CHANNEL POWER MOSFET 3 .6 0 (0 .1 4 2 ) M a x . 1 3 0 .7 6 (0 .0 3 0 ) m in . VDSS ID(cont) RDS(on) FEATURES -100V -31A 0.060Ω 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (.

Features

-100V -31A 0.060Ω 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 )
• HERMETICALLY SEALED SURFACE MOUNT PACKAGE
• SMALL FOOTPRINT
  – EFFICIENT USE OF PCB SPACE. 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1 ) 9 ) 6 ) 4 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 )
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• HIGH PACKING DENSITIES SMD 1 PACKAGE (TO-276AB) Pad 1
  – Source Pad 2
  – Drain Pad 3
  – Gate Note: IRF5210SMD also available with pins 1 and 3 reversed. ±20V ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID I.