PD - 90493F POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number IRFM450 IRFM450 JANTX2N7228 JANTXV2N7228 REF: MIL-PRF-19500/592 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY ® RDS(on) 0.415 Ω ID 12A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves ver.
n n n n n n Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Dynamic dv/dt Rating Light-weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight For .
IRFM450 MECHANICAL DATA Dimensions in mm (inches) 13.59 (0.535) 13.84 (0.545) 3.53 (0.139) Dia. 3.78 (0.149) 6.32 (0.24.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFM440 |
International Rectifier |
POWER MOSFET THRU-HOLE (TO-254AA) | |
2 | IRFM460 |
International Rectifier |
POWER MOSFET THRU-HOLE (TO-254AA) | |
3 | IRFM014A |
Samsung |
Power MOSFET | |
4 | IRFM044 |
International Rectifier |
N-Channel Power MOSFET | |
5 | IRFM054 |
Seme LAB |
N-CHANNEL POWER MOSFET | |
6 | IRFM064 |
International Rectifier |
POWER MOSFET THRU-HOLE (TO-254AA) | |
7 | IRFM110A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
8 | IRFM120A |
Fairchild Semiconductor |
IEEE802.3af Compatible | |
9 | IRFM1310ST |
Seme LAB |
N-CHANNEL POWER MOSFET | |
10 | IRFM140 |
International Rectifier |
HEXFET TRANSISTOR | |
11 | IRFM150 |
Seme LAB |
N-CHANNEL POWER MOSFET | |
12 | IRFM210A |
Fairchild Semiconductor |
Advanced Power MOSFET |