IRFM250D - Seme LAB

IRFM250D N-CHANNEL POWER MOSFET

IRFM250D MECHANICAL DATA Dimensions in mm (inches) 2 0 .3 2 (.8 0 0 ) 2 0 .0 6 (.7 9 0 ) 4 .9 5 (.1 9 5 ) 4 .1 9 (.1 6 5 ) 3 .8 1 (.1 5 0 ) B S C 9 .5 2 (.3 7 5 ) 8 .7 6 (.3 4 5 ) 1 .2 7 (.0 5 0 ) 1 .0 2 (.0 4 0 ) 6 .6 0 (.2 6 0 ) 6 .3 2 (.2 4 9 ) 1 3 .8 4 (.5 4 5 ) 1 3 .5 9 (.5 3 5 ) 6 .9 1 (.2 7 2 ) 6 .8 1 (.2 6 8 ) 1 3 .8 4 (.5 4 5 ) 1 3 .5 9 (.5 3 .

Features

• N
  –CHANNEL MOSFET
• HIGH VOLTAGE
• INTEGRAL PROTECTION DIODE
• HERMETIC ISOLATED TO-254 PACKAGE
• CERAMIC SURFACE MOUNT PACKAGE OPTION TO
  –254 Metal Package Pin 1
  – Drain Pin 2
  – Source Pin 3
  – Gate ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VGS Gate
  – Source Voltage ID Continuous Drain Current IDM Pulsed Drain Current PD Max. Power Dissipation Linear Derating Factor @ VGS = 10V , TC = 25°C @ VGS = 10V , TC = 100°C @ TC = 25°C ±20V 27.4A 17A 110A 150W 1.2W / °C IL dv / dt Avalanche Current , Clamped 1 Peak Diode Recovery 2 27.4A 5.5V / ns RθJC RθJA Rθ.