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Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of a.
• Halogen-free According to IEC 61249-2-21
Definition
• Advanced Process Technology
• Surface Mount (IRF9Z24S, SiHF9Z24S)
• Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L)
• 175 °C Operating Temperature
• Fast Switching
• P-Channel
• Fully Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ex.
IRF9Z24S - International Rectifier
l l D VDSS = -60V RDS(on) = 0.28Ω G ID = -11A S Third Generation HEXFETs from International Rectifier utilize advan.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF9Z24 |
International Rectifier |
POWER MOSFET |
|
| 2 | IRF9Z24L |
International Rectifier |
Power MOSFET |
|
| 3 | IRF9Z24L |
Vishay |
Power MOSFET |
|
| 4 | IRF9Z24N |
International Rectifier |
Power MOSFET |
|
| 5 | IRF9Z24NL |
International Rectifier |
Power MOSFET |
|
| 6 | IRF9Z24NLPBF |
International Rectifier |
Power MOSFET |
|
| 7 | IRF9Z24NPBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 8 | IRF9Z24NS |
International Rectifier |
Power MOSFET |
|
| 9 | IRF9Z24NSPbF |
International Rectifier |
Power MOSFET |
|
| 10 | IRF9Z20 |
Samsung |
(IRF9Z24) P Channel Power MOSFET |
|
| 11 | IRF9Z20 |
Vishay |
Power MOSFET |
|
| 12 | IRF9Z20 |
International Rectifier |
P-Channel MOSFET |
|