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isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤200mΩ(@VGS= -10V; ID= -8.4A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VAL.
·Static drain-source on-resistance:
RDS(on)≤200mΩ(@VGS= -10V; ID= -8.4A)
·Advanced trench process technology
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Fast switching application.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
-100
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
-14
PD
Total Dissipation @TC=25℃
79
Tj
Max. Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAME.
IRF9530NS - International Rectifier
l l D VDSS = -100V RDS(on) = 0.20Ω G ID = -14A S Fifth Generation HEXFETs from International Rectifier utilize adva.
IRF9530NS - VBsemi
IRF9530NS-VB IRF9530NS-VB Datasheet P-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF9530N |
International Rectifier |
Power MOSFET |
|
| 2 | IRF9530N |
INCHANGE |
P-Channel MOSFET |
|
| 3 | IRF9530NL |
International Rectifier |
Power MOSFET |
|
| 4 | IRF9530NL |
INCHANGE |
P-Channel MOSFET |
|
| 5 | IRF9530NLPbF |
Infineon |
Power MOSFET |
|
| 6 | IRF9530NLPBF |
International Rectifier |
Power MOSFET |
|
| 7 | IRF9530NPBF |
International Rectifier |
Power MOSFET |
|
| 8 | IRF9530NSPbF |
Infineon |
Power MOSFET |
|
| 9 | IRF9530NSPBF |
International Rectifier |
Power MOSFET |
|
| 10 | IRF9530NSTRR |
International Rectifier |
Power MOSFET |
|
| 11 | IRF9530 |
Intersil Corporation |
P-Channel Power MOSFET |
|
| 12 | IRF9530 |
International Rectifier |
Power MOSFET |
|