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IRF9140 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) P–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES • HERMETICALLY SEALED TO–3 METAL PACKAGE 1 20.32 (0.800) 18.80 (0.740) dia. 7.87 (0.310) 6.99 (0.275) 1.78 (0.070) 1.52 (0.060) 11.18 (0.440) 10.67 (0.420) 26.67 (1.050) max. .
• HERMETICALLY SEALED TO
–3 METAL PACKAGE
1
20.32 (0.800) 18.80 (0.740) dia. 7.87 (0.310) 6.99 (0.275) 1.78 (0.070) 1.52 (0.060)
11.18 (0.440) 10.67 (0.420)
26.67 (1.050) max.
4.09 (0.161) 3.84 (0.151) dia. 2 plcs.
2
–100V
–18A 0.2Ω
• SIMPLE DRIVE REQUIREMENTS
• SCREENING OPTIONS AVAILABLE
1.09 (0.043) 0.97 (0.038) dia. 2 plcs.
TO
–3 Metal Package
Pin 1
– Gate Pin 2
– Source Case
– Drain
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS ID ID IDM PD EAS IAR EAR dv/dt TJ , Tstg TL Gate
– Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Cur.
IRF9140 - Intersil Corporation
IRF9140 Data Sheet February 1999 File Number 2278.3 -19A, -100V, 0.200 Ohm, P-Channel Power MOSFET These are P-Channel .
IRF9140 - Samsung Electronics
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.
IRF9140 - International Rectifier
HEXFET POWER MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors. The efficient geometry .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF9141 |
Samsung Electronics |
(IRF9140 - IRF9143) P-Channel Power MOSFETs |
|
| 2 | IRF9141 |
International Rectifier |
(IRF9140 - IRF9143) P-Channel 100V Power MOSFETs |
|
| 3 | IRF9142 |
Samsung Electronics |
(IRF9140 - IRF9143) P-Channel Power MOSFETs |
|
| 4 | IRF9142 |
International Rectifier |
(IRF9140 - IRF9143) P-Channel 100V Power MOSFETs |
|
| 5 | IRF9143 |
International Rectifier |
(IRF9140 - IRF9143) P-Channel 100V Power MOSFETs |
|
| 6 | IRF9143 |
Samsung Electronics |
(IRF9140 - IRF9143) P-Channel Power MOSFETs |
|
| 7 | IRF9130 |
Samsung semiconductor |
P-Channel Power MOSFET |
|
| 8 | IRF9130 |
Seme LAB |
P-Channel Power MOSFET |
|
| 9 | IRF9130 |
Intersil Corporation |
P-Channel Power MOSFET |
|
| 10 | IRF9130 |
International Rectifier |
P-Channel Power MOSFET |
|
| 11 | IRF9130SMD |
Seme LAB |
P-Channel Power MOSFET |
|
| 12 | IRF9131 |
Samsung semiconductor |
P-Channel Power MOSFET |
|