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These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designe.
·silicon Gate for fast switching at elevate ·rugged ·low drive requirements ·ease of paralleling APPLICATIONS ·high spe.
These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as sw.
• 2.2A and 2.5A, 450V and 500V • rDS(ON)= 3-Ofi and 4.0Q • SOA is Power Dissipation Limited • Nanosecond Switching Spee.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF420 |
ART CHIP |
N-Channel Power MOSFET | |
2 | IRF420 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
3 | IRF420 |
Samsung semiconductor |
N-Channel Power MOSFET | |
4 | IRF420 |
Intersil Corporation |
N-Channel Power MOSFET | |
5 | IRF420 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
6 | IRF420 |
NJS |
N-Channel Power MOSFETs | |
7 | IRF421 |
ART CHIP |
N-Channel Power MOSFET | |
8 | IRF421 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
9 | IRF421 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
10 | IRF421 |
Samsung semiconductor |
N-Channel Power MOSFET | |
11 | IRF421 |
Intersil Corporation |
N-Channel Power MOSFET | |
12 | IRF421 |
NJS |
N-Channel Power MOSFETs |