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isc N-Channel MOSFET Transistor IRF135B203，IIRF135B203 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.4mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ·ABSOLUTE MAXIMUM RATINGS(T.
·Static drain-source on-resistance:
RDS(on) ≤8.4mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
135
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
129
IDM
Drain Current-Single Pulsed
512
PD
Total Dissipation @TC=25℃
441
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃.
IRF135B203 - International Rectifier
Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-brid.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF135S203 |
International Rectifier |
Power MOSFET |
|
| 2 | IRF135S203 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IRF135SA204 |
International Rectifier |
Power MOSFET |
|
| 4 | IRF130 |
Samsung semiconductor |
N-Channel Power MOSFET |
|
| 5 | IRF130 |
Seme LAB |
N-Channel Power MOSFET |
|
| 6 | IRF130 |
Intersil Corporation |
N-Channel Power MOSFET |
|
| 7 | IRF130 |
International Rectifier |
N-Channel Power MOSFET |
|
| 8 | IRF130 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 9 | IRF130 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 10 | IRF1302 |
International Rectifier |
Power MOSFET |
|
| 11 | IRF1302L |
International Rectifier |
Power MOSFET |
|
| 12 | IRF1302S |
International Rectifier |
Power MOSFET |
|