Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a.
s low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF1104L) is available for lowprofile applications. DataShee D 2 P ak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Ener.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF1104 |
International Rectifier |
Power MOSFET | |
2 | IRF1104 |
INCHANGE |
N-Channel MOSFET | |
3 | IRF1104LPBF |
International Rectifier |
(IRF1104S/LPBF) HEXFET Power MOSFET | |
4 | IRF1104S |
International Rectifier |
(IRF1104L/S) HEXFET Power MOSFET | |
5 | IRF1104SPBF |
International Rectifier |
(IRF1104S/LPBF) HEXFET Power MOSFET | |
6 | IRF100 |
ETC |
HIGH POWER WIRE WOUND RESISTORS | |
7 | IRF100B201 |
International Rectifier |
Power MOSFET | |
8 | IRF100B201 |
INCHANGE |
N-Channel MOSFET | |
9 | IRF100B202 |
International Rectifier |
Power MOSFET | |
10 | IRF100B202 |
INCHANGE |
N-Channel MOSFET | |
11 | IRF100P218 |
Infineon |
MOSFET | |
12 | IRF100S201 |
International Rectifier |
Power MOSFET |