The IRC3528Q19-B20 is a GaAlAs infrared LED housed in a miniature SMD package. The device has a peak wavelength of 940nm LED spectrally matched with phototransistor or photodiode. Package Outline Schematic Anode Cathode CT Micro Proprietary & Confidential Page 1 Rev 0.2(Preliminary) Apr, 2015 IRC3528Q19-B20 SMD Type 940nm Infrared Emitter Absolute M.
Small double-end package
Viewing Angle = 600
High reliability
Good spectral matching to Si photo detector
RoHS compliance
Applications
Infrared sensor
Description
The IRC3528Q19-B20 is a GaAlAs infrared LED housed in a miniature SMD package. The device has a peak wavelength of 940nm LED spectrally matched with phototransistor or photodiode.
Package Outline
Schematic
Anode
Cathode
CT Micro Proprietary & Confidential
Page 1
Rev 0.2(Preliminary) Apr, 2015
IRC3528Q19-B20 SMD Type 940nm Infrared Emitter
Absolute Maximum Rating at 250C
Symbol
Parameters
IF Continuous Forwar.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRC3020N13-B20 |
CT Micro |
Infrared Emitter | |
2 | IRC4BC40F |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
3 | IRC530 |
International Rectifier |
Power MOSFET | |
4 | IRC530PbF |
International Rectifier |
POWER MOSFET | |
5 | IRC540 |
International Rectifier |
Power MOSFET | |
6 | IRC540PbF |
International Rectifier |
POWER MOSFET | |
7 | IRC630 |
International Rectifier |
Power MOSFET | |
8 | IRC630PbF |
International Rectifier |
POWER MOSFET | |
9 | IRC634 |
International Rectifier |
Power MOSFET | |
10 | IRC634PbF |
International Rectifier |
POWER MOSFET | |
11 | IRC640 |
International Rectifier |
Power MOSFET | |
12 | IRC640PBF |
International Rectifier |
HEXFET POWER MOSFET |