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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW60R099C7 IIPW60R099C7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤99mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Suitable for hard and soft switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL.
·Static drain-source on-resistance:
RDS(on)≤99mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Suitable for hard and soft switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
22
IDM
Drain Current-Single Pulsed
83
PD
Total Dissipation @TC=25℃
110
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARA.
IPW60R099C7 - Infineon
CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)p.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPW60R099C6 |
Infineon |
MOSFET |
|
| 2 | IPW60R099CP |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPW60R099CP |
Infineon Technologies |
Power Transistor |
|
| 4 | IPW60R099CPA |
Infineon |
Power Transistor |
|
| 5 | IPW60R099CS |
Infineon |
Power Transistor |
|
| 6 | IPW60R099P6 |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IPW60R099P6 |
Infineon Technologies |
MOSFET |
|
| 8 | IPW60R099P7 |
Infineon |
MOSFET |
|
| 9 | IPW60R099P7 |
INCHANGE |
N-Channel MOSFET |
|
| 10 | IPW60R016CM8 |
Infineon |
MOSFET |
|
| 11 | IPW60R017C7 |
Infineon |
MOSFET |
|
| 12 | IPW60R024P7 |
Infineon |
Power Transistor |
|