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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE .
·With TO-251(IPAK) packaging
·High speed switching
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Power supply
·DC-DC converters
·Motor control
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
500
VGSS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
2.6
IDM
Drain Current-Single Pulsed
4.1
PD
Total Dissipation
26
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARA.
IPU50R3K0CE - Infineon
IPD50R3K0CE,IPU50R3K0CE MOSFET 500VCoolMOSªCEPowerTransistor CoolMOS™isarevolutionarytechnologyforhighvolta.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPU50R1K4CE |
Infineon |
MOSFET |
|
| 2 | IPU50R1K4CE |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPU50R2K0CE |
Infineon |
Power Transistor |
|
| 4 | IPU50R2K0CE |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IPU50R950CE |
Infineon |
MOSFET |
|
| 6 | IPU50R950CE |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IPU04N03LA |
Infineon Technologies AG |
OptiMOS 2 Power-Transistor |
|
| 8 | IPU050N03L |
Infineon Technologies |
Fast switching MOSFET |
|
| 9 | IPU050N03L |
INCHANGE |
N-Channel MOSFET |
|
| 10 | IPU050N03LG |
Infineon Technologies |
Power-Transistor |
|
| 11 | IPU05N03LA |
Infineon Technologies AG |
OptiMOS 2 Power-Transistor |
|
| 12 | IPU060N03L |
INCHANGE |
N-Channel MOSFET |
|