. . . . . 1 Maximum ratings 3 Thermal characteristics .
•ExtremelylowlossesduetoverylowFOMRDS(on)
*QgandRDS(on)
*Eoss
•Excellentthermalbehavior
•IntegratedESDprotectiondiode
•Lowswitchinglosses(Eoss)
•Productvalidationacc.JEDECStandard
Benefits
•Costcompetitivetechnology
•Lowertemperature
•HighESDruggedness
•Enablesefficiencygainsathigherswitchingfrequencies
•Enableshighpowerdensitydesignsandsmallformfactors
Potentialapplications
RecommendedforFlybacktopologiesforexampleusedinChargers, Adapters,LightingApplications,etc.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsontheg.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPS70R950CE |
Infineon |
MOSFET | |
2 | IPS70R950CE |
INCHANGE |
N-Channel MOSFET | |
3 | IPS70R1K4CE |
Infineon |
MOSFET | |
4 | IPS70R1K4CE |
INCHANGE |
N-Channel MOSFET | |
5 | IPS70R1K4P7S |
Infineon |
MOSFET | |
6 | IPS70R2K0CE |
Infineon |
MOSFET | |
7 | IPS70R360P7S |
Infineon |
MOSFET | |
8 | IPS70R600CE |
Infineon |
MOSFET | |
9 | IPS70R600P7S |
Infineon |
MOSFET | |
10 | IPS7071GPBF |
International Rectifier |
PROTECTED HIGH SIDE SWITCH | |
11 | IPS7081PBF |
International Rectifier |
INTELLIGENT POWER HIGH SIDE SWITCH | |
12 | IPS7081RPBF |
International Rectifier |
INTELLIGENT POWER HIGH SIDE SWITCH |