IPP80N04S3-06 - Infineon Technologies

IPP80N04S3-06 Power-Transistor

OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested IPB80N04S3-06 IPI80N04S3-06, IPP80N04S3-06 Product Summary V DS R DS(on),max (SMD version) ID 40 V 5.4 mΩ 80 A PG-TO263-3-2 PG-TO262-3-1 P.

Features

• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested IPB80N04S3-06 IPI80N04S3-06, IPP80N04S3-06 Product Summary V DS R DS(on),max (SMD version) ID 40 V 5.4 mΩ 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N04S3-06 IPI80N04S3-06 IPP80N04S3-06 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3N0406 3N0406 3N0406 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V.