IPP60R280P7 - INCHANGE

IPP60R280P7 N-Channel MOSFET

·Combines the benefits of a fast switching SJ MOSFET with excellent ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 12 IDM Drain Current-Single Pulsed 36 PD Total Dissipation @TC=25℃ 53 Tj Max. Operating Junction Temperature 150 T.

Features

·Static drain-source on-resistance: RDS(on) ≤0.28Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRIPTION
·Combines the benefits of a fast switching SJ MOSFET with excellent ease of use
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 12 IDM Drain Current-Single Pulsed 36 PD Total Dissipation @TC=25℃ 53 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -5.