IPI051NE8NG - Infineon Technologies

IPI051NE8NG Power-Transistor

www.DataSheet4U.com IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary V DS R DS(.

Features

• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO 263) ID 85 5.1 100 V mΩ A
• Ideal for high-frequency switching and synchronous rectification Type IPB051NE8N G IPI05CNE8N G IPP054NE8N G Package Marking PG-TO263-3 051NE8N PG-TO262-3 05CNE8N PG-TO220-3 054NE8N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions.