Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
. . . . . 1 Maximum ratings 3 Thermal characteristics .
•Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding commutationruggedness
•Significantreductionofswitchingandconductionlosses
•ExcellentESDrobustness>2kV(HBM)forallproducts
•BetterRDS(on)/packageproductscomparedtocompetitionenabledbya lowRDS(on)
*A(below1Ohm
*mm²)
•Productvalidationacc.JEDECStandard
Benefits
•Easeofuseandfastdesign-inthroughlowringingtendencyandusage acrossPFCandPWMstages
•Simplifiedthermalmanagementduetolowswitchingandconduction losses
•Increasedpowerdensitysolutionsenabledbyusingpr.
IPD60R360P7S - INCHANGE
isc N-Channel MOSFET Transistor IPD60R360P7S,IIPD60R360P7S ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.36Ω .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPD60R360P7 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IPD60R360P7 |
Infineon |
MOSFET |
|
| 3 | IPD60R380C6 |
Infineon Technologies |
MOSFET |
|
| 4 | IPD60R380C6 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IPD60R380E6 |
Infineon Technologies |
MOSFET |
|
| 6 | IPD60R380E6 |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IPD60R380P6 |
Infineon |
MOSFET |
|
| 8 | IPD60R380P6 |
INCHANGE |
N-Channel MOSFET |
|
| 9 | IPD60R385CP |
Infineon Technologies |
Power Transistor |
|
| 10 | IPD60R385CP |
INCHANGE |
N-Channel MOSFET |
|
| 11 | IPD60R3K3C6 |
Infineon Technologies |
MOSFET |
|
| 12 | IPD60R3K3C6 |
INCHANGE |
N-Channel MOSFET |
|