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IPB80N06S2L-H5 - Infineon Technologies

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IPB80N06S2L-H5 Power-Transistor

and charts stated herein. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies Office (www.infineon.com) Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon .

Features


• N-channel Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested IPB80N06S2L-H5 IPP80N06S2L-H5 Product Summary V DS R DS(on),max (SMD version) ID 55 V 4.7 mΩ 80 A PG-TO263-3-2 PG-TO220-3-1 Type IPB80N06S2L-H5 IPP80N06S2L-H5 Package Ordering Code Marking PG-TO263-3-2 SP0002-19068 2N06LH5 PG-TO220-3-1 SP0002-19067 2N06LH5 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) Pulsed .

The same part from a different manufacturer

Datasheet IPB80N06S2L-H5 - VBsemi IPB80N06S2L-H5

IPB80N06S2L-H5-VB IPB80N06S2L-H5-VB Datasheet N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS RDS(on) V.

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