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Isc N-Channel MOSFET Transistor IPB65R280E6 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDS.
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
650
VGSS ID IDM
Gate-Source Voltage
Drain Current-ContinuousTc=25℃ Tc=100℃
Drain Current-Single Pulsed
±30
13.8 8.7
39
PD
Total Dissipation @TC=25℃
104
Tch
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL .
IPB65R280E6 - Infineon Technologies
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) pri.
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|---|---|---|---|---|
| 1 | IPB65R280C6 |
Infineon Technologies |
MOSFET |
|
| 2 | IPB65R280C6 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPB65R225C7 |
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| 8 | IPB65R065C7 |
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| 12 | IPB65R099C6 |
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