IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 150 V 20 mW 50 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1).
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
150 V 20 mW 50 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G
IPP200N15N3 G
Package
PG-TO263-3
PG-TO252-3
Marking
200N15N
200N15N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Sym.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPB200N15N3G |
Infineon Technologies |
Power-Transistor | |
2 | IPB200N15N3G |
INCHANGE |
N-Channel MOSFET | |
3 | IPB200N25N3 |
Infineon |
Power-Transistor | |
4 | IPB200N25N3G |
Infineon Technologies |
Power-Transistor | |
5 | IPB200N25N3G |
INCHANGE |
N-Channel MOSFET | |
6 | IPB22N03S4L-15 |
Infineon Technologies |
Power-Transistor | |
7 | IPB230N06L3G |
Infineon Technologies |
Power-Transistor | |
8 | IPB240N03S4L-R8 |
Infineon |
Power-Transistor | |
9 | IPB240N03S4L-R9 |
Infineon |
Power-Transistor | |
10 | IPB240N04S4-1R0 |
Infineon |
Power-Transistor | |
11 | IPB240N04S4-R9 |
Infineon |
Power-Transistor | |
12 | IPB25N06S3-25 |
Infineon Technologies |
Power-Transistor |