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. . . . . . . . 1 Maximum ratings . . . 3 Thermal characteristics . . . .
• N‑channel, normal level
• Very low on‑resistance RDS(on)
• Excellent gate charge x RDS(on) product (FOM)
• Very low reverse recovery charge (Qrr)
• High avalanche energy rating
• 175°C operating temperature
• Optimized for high frequency switching
• Pb‑free lead plating; RoHS compliant
• Halogen‑free according to IEC61249‑2‑21
• MSL 1 classified according to J‑STD‑020
Product validation
Fully qualified according to JEDEC for Industrial Applications
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS
120
V
RDS(on),max
13.3
mΩ
ID
55
A
Qoss
36
nC
QG
15
nC
Qrr (1000 A.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPB136N08N3G |
Infineon |
Power-Transistor |
|
| 2 | IPB13N03LB |
Infineon Technologies |
Power-Transistor |
|
| 3 | IPB100N04S2-04 |
Infineon Technologies |
Power-Transistor |
|
| 4 | IPB100N04S2L-03 |
Infineon Technologies |
Power-Transistor |
|
| 5 | IPB100N04S3-03 |
Infineon Technologies |
OptiMOS-T Power-Transistor |
|
| 6 | IPB100N04S4-H2 |
Infineon Technologies |
OptiMOS-T2 Power-Transistor |
|
| 7 | IPB100N06S2-05 |
Infineon Technologies |
Power-Transistor |
|
| 8 | IPB100N06S2L-05 |
Infineon Technologies |
Power-Transistor |
|
| 9 | IPB100N06S3-03 |
Infineon Technologies |
Power-Transistor |
|
| 10 | IPB100N06S3L-03 |
Infineon Technologies |
Power-Transistor |
|
| 11 | IPB100N08S2-07 |
Infineon Technologies |
Power-Transistor |
|
| 12 | IPB100N08S2L-07 |
Infineon Technologies |
Power-Transistor |
|