and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, c.
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
• N-channel - Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated
• Pb-free lead plating; RoHS compliant
Product Summary V DS R DS(on),max ID 30 9.6 50 V mΩ A
PG-TO263-3
Type IPB10N03LB
Package PG-TO263-3
Ordering Code
Marking 10N03LB
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C P.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPB10N03L |
Infineon Technologies AG |
OptiMOS Buck converter series | |
2 | IPB100N04S2-04 |
Infineon Technologies |
Power-Transistor | |
3 | IPB100N04S2L-03 |
Infineon Technologies |
Power-Transistor | |
4 | IPB100N04S3-03 |
Infineon Technologies |
OptiMOS-T Power-Transistor | |
5 | IPB100N04S4-H2 |
Infineon Technologies |
OptiMOS-T2 Power-Transistor | |
6 | IPB100N06S2-05 |
Infineon Technologies |
Power-Transistor | |
7 | IPB100N06S2L-05 |
Infineon Technologies |
Power-Transistor | |
8 | IPB100N06S3-03 |
Infineon Technologies |
Power-Transistor | |
9 | IPB100N06S3L-03 |
Infineon Technologies |
Power-Transistor | |
10 | IPB100N08S2-07 |
Infineon Technologies |
Power-Transistor | |
11 | IPB100N08S2L-07 |
Infineon Technologies |
Power-Transistor | |
12 | IPB100N10S3-05 |
Infineon Technologies |
Power-Transistor |