The iP2010 is a fully optimized, high frequency power stage solution for synchronous buck applications utilizing IR’s Gallium Nitride (GaN)based power device technology platform. The iP2010 integrates a highly sophisticated, ultra fast PowIRtune driver IC matched to a multi-switch monolithic GaN-based power device. These devices are mounted in a completely w.
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• Input voltage range of 7V to 13.2V Output voltage range of 0.6V to 5.5V Output current up to 30A Benchmark peak and full load efficiency
– no heat sink required Operation up to 3MHz Ultrafast, PowIRtuneTM gate driver Wireless, low noise flip-chip design Industry-standard TTL compatible Enable and PWM inputs Small footprint LGA package (7.7mm x 6.5mm x 1.7mm) Pin compatible with iP2011 Description
The iP2010 is a fully optimized, high frequency power stage solution for synchronous buck applications utilizing IR’s Gallium Nitride (GaN)based power device technology platform. T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IP2012 |
Ubicom |
(IP2012 / IP2022) Wireless Network Processor | |
2 | IP20121R0MPS9 |
DARFON |
Multi-Layer Power Inductors | |
3 | IP20121R0MTS5 |
DARFON |
Multi-Layer Power Inductors | |
4 | IP20121R5MPS9 |
DARFON |
Multi-Layer Power Inductors | |
5 | IP20122R2MPS9 |
DARFON |
Multi-Layer Power Inductors | |
6 | IP20122R2MTS5 |
DARFON |
Multi-Layer Power Inductors | |
7 | IP20123R3MPS9 |
DARFON |
Multi-Layer Power Inductors | |
8 | IP20124R7MPL9 |
DARFON |
Multi-Layer Power Inductors | |
9 | IP20124R7MPS9 |
DARFON |
Multi-Layer Power Inductors | |
10 | IP2012R47MPS9 |
DARFON |
Multi-Layer Power Inductors | |
11 | IP2012R47MTS5 |
DARFON |
Multi-Layer Power Inductors | |
12 | IP20161R0MPS9 |
DARFON |
Multi-Layer Power Inductors |