IMYH200R012M1H - Infineon

IMYH200R012M1H MOSFET

1 – drain 2 – source 3 – Kelvin sense contact 4 – gate Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction (only for 4pin, TO263-7L) Type IMYH200R012M1H Package PG-TO247-4-PLUS-NT14 Marking 20M1H012 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this doc.

Features

• VDSS = 2000 V at Tvj = 25°C
• IDCC = 123 A at Tc = 25°C
• RDS(on) = 12 mΩ at VGS = 18 V, Tvj = 25°C
• Very low switching losses
• Benchmark gate threshold voltage, VGS(th) = 4.5 V
• Robust body diode for hard commutation
• .XT interconnection technology for best-in-class thermal performance 2021-10-27 restricted Copyright © Infineon Technologies AG 2021. All rights reserved. Potential applications
• String inverter
• Solar power optimizer
• EV-Charging Product validation
• Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
• Please also note t.