IMWH170R450M1 - Infineon

IMWH170R450M1 Silicon Carbide MOSFET

1 – gate 2 – drain 3 – source TO-247 HCC – 3Pin 2021-10-27 restricted Copyright © Infineon T Type IMWH170R450M1 Package PG-TO247-3-STD-NN4.8 Marking 170M1450 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2024-03-25 IMWH170R450M1 CoolSiC™ 1700 V SiC Trench MOSFET Table.

Features

• VDSS = 1700 V at Tvj = 25°C
• IDDC = 10 A at TC = 25°C
• RDS(on) = 450 mΩ at VGS = 12 V, Tvj = 25°C
• Optimized for fly-back topologies
• 12 V / 0 V gate-source voltage compatible with most fly-back controllers
• Very low switching losses
• Benchmark gate threshold voltage, VGS(th) = 4.5 V
• Fully controllable dv/dt for EMI optimization
• .XT interconnection technology for best-in-class thermal performance Potential applications
• General purpose drives (GPD)
• EV-Charging
• Energy Storage Systems (ESS)
• String inverter
• Uninterruptible power supplies Product validation
• Qualified for ind.