Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
. . . . . . . . 1 Maximum ratings . . . 3 Thermal characteristics . . . .
• Ultra‑low switching losses
• Benchmark gate threshold voltage, VGS(th) = 4.5 V
• Robust against parasitic turn‑on even with 0 V turn‑off gate voltage
• Flexible driving voltage and compatible with bipolar driving scheme
• Robust body diode operation under hard commutation events
• .XT interconnection technology for best‑in‑class thermal performance
Benefits
• Enables high efficiency and high power density designs
• Facilitates great ease of use and integration
• Provides the best price performance ratio compared to Industry’s most
ambitious roadmaps
• Reduces the size, weight and bill of mat.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IMTA65R020M2H |
Infineon |
SiC MOSFET |
|
| 2 | IMTA65R060M2H |
Infineon |
SiC MOSFET |
|
| 3 | IMT-901 |
Nanotech |
Microstep Constant Current Driver IC |
|
| 4 | IMT-901 |
NANOTEC |
Mikroschritt-Treiber |
|
| 5 | IMT17 |
Diodes |
DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
|
| 6 | IMT17 |
Rohm |
General purpose dual transistors |
|
| 7 | IMT17 |
UTC |
GENERAL PURPOSE DUAL TRANSISTOR |
|
| 8 | IMT18 |
Rohm |
General purpose transistors |
|
| 9 | IMT1A |
Rohm |
General Purpose Dual Transistors |
|
| 10 | IMT2A |
Rohm |
Dual Transistor |
|
| 11 | IMT2A |
UTC |
GENERAL PURPOSE DUAL TRANSISTOR |
|
| 12 | IMT3A |
Rohm |
General purpose dual transistors |
|