. . . . . . . . 1 Maximum ratings . . . 3 Thermal characteristics . . . .
• Ideal for high frequency switching and synchronous rectification
• Commutation robust fast body diode with low Qfr
• Low RDS(on) dependency on temperature
• Benchmark gate threshold voltage, VGS(th) = 4.5 V
• Recommended gate driving voltage 0 V to 18 V
• .XT interconnection technology for best‑in‑class thermal performance
• 100% avalanche tested
Potential applications
• SMPS
• Solar PV inverters
• Energy storage, UPS and battery formation
• Class‑D audio
• Motor drives
Product validation
Fully qualified according to JEDEC for Industrial Applications
Table 1 Parameter VDS RDS(on),typ ID Qos.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IMT40R011M2H |
Infineon |
400V G2 MOSFET | |
2 | IMT40R015M2H |
Infineon |
400V MOSFET | |
3 | IMT40R025M2H |
Infineon |
400V MOSFET | |
4 | IMT40R045M2H |
Infineon |
400V MOSFET | |
5 | IMT4 |
Diodes Incorporated |
DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |
6 | IMT4 |
Rohm |
General purpose dual transistors | |
7 | IMT-901 |
Nanotech |
Microstep Constant Current Driver IC | |
8 | IMT-901 |
NANOTEC |
Mikroschritt-Treiber | |
9 | IMT17 |
Diodes |
DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |
10 | IMT17 |
Rohm |
General purpose dual transistors | |
11 | IMT17 |
UTC |
GENERAL PURPOSE DUAL TRANSISTOR | |
12 | IMT18 |
Rohm |
General purpose transistors |