. . . . . . . . 1 Maximum ratings . . . 3 Thermal characteristics . . . .
• Ultra‑low switching losses
• Benchmark gate threshold voltage, VGS(th) = 4.5 V
• Robust against parasitic turn‑on even with 0 V turn‑off gate voltage
• Flexible driving voltage and compatible with bipolar driving scheme
• Robust body diode operation under hard commutation events
• .XT interconnection technology for best‑in‑class thermal performance
Benefits
• Enables high efficiency and high power density designs
• Facilitates great ease of use and integration
• Provides the best price performance ratio compared to Industry’s most
ambitious roadmaps
• Reduces the size, weight and bill of mat.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IMLT65R020M2H |
Infineon |
SiC MOSFET | |
2 | IMLT65R040M2H |
Infineon |
SiC MOSFET | |
3 | IMLT65R050M2H |
Infineon |
SiC MOSFET | |
4 | IMLT65R060M2H |
Infineon |
SiC MOSFET | |
5 | IML10 |
Power-One |
10 Watt DC-DC Converters | |
6 | iML8681 |
IML |
Application Notes | |
7 | iML8683 |
IML |
Three Terminal Current Controller | |
8 | IM00GR |
TE |
Signal Relays | |
9 | IM00GR |
Tyco |
IM Relay | |
10 | IM00JR |
TE |
Signal Relays | |
11 | IM00JR |
Tyco |
IM Relay | |
12 | IM00NS |
TE |
Signal Relays |