ILD03N60 - Infineon Technologies

ILD03N60 LightMOS Power Transistor

www.DataSheet4U.com ^ ILA03N60, ILP03N60 ILB03N60, ILD03N60 LightMOS Power Transistor C • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET Avalanche rated 150°C operating temperature FullPak isolates.

Features

-emitter voltage DC collector current Pulsed collector current, tp limited by Tjmax, tp < 10 ms Pulsed collector current, tp limited by Tjmax Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax, tp < 10 ms Diode pulsed current, tp limited by Tjmax Avalanche energy, single pulse IC=0.4A, VCE=50V Gate-emitter voltage Reverse diode dv/dt IC ≤ 3A, VCE ≤ 450V, Tjmax ≤ 150°C Power dissipation (TC = 25°C) Operating junction and storage temperature Soldering temperature for 10 s (according to JEDEC J-STA-020A) 4 2.5 mJ V V/ns 27 W °C -55...+150 D-Pak Others 255 220.