IKQ50N120CH3 - Infineon

IKQ50N120CH3 IGBT

. . . . . . . . . 1 Table of Contents . . . . 2 Maximum Ratings . . . . .

Features

C HighspeedH3technologyoffers:
•Highefficiencyinhardswitchingandresonanttopologies
•10µsecshortcircuitwithstandtimeatTvj=175°C
•Easyparallelingcapabilityduetopositivetemperature coefficientinVCEsat
•LowEMI
•LowGateChargeQG
•Verysoft,fastrecoveryfullcurrentanti-paralleldiode
•MaximumjunctiontemperatureTvjmax=175°C
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications:
•IndustrialUPS
•Charger
•EnergyStorage
•Three-levelSolarStringInverter
•Welding ProductV.