IGP01N120H2 - Infineon Technologies

IGP01N120H2 IGBT

IGP01N120H2, IGD01N120H2 HighSpeed 2-Technology • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff op.

Features

Tstg -40...+150 260 225 (for SMD) °C VGE Ptot ±20 28 V W ICpuls Symbol VCE IC 3.2 1.3 3.5 3.5 Value 1200 Unit V A VCE 1200V 1200V 1200V IC 1A 1A 1A Eoff 0.09mJ 0.09mJ 0.09mJ Tj 150°C 150°C 150°C Package P-TO-220-3-1 P-TO-263 (D PAK) P-TO-252 (DPAK) 2 Ordering Code Q67040-S4593 Q67040-S4592 Q67040-S4591 Power Semiconductors 1 Rev. 2, Mar-04 IGP01N120H2, IGD01N120H2 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction
  – case Thermal resistance, junction
  – ambient SMD version, device on PCB1) RthJA P-TO-263 (D2PAK) RthJA P-TO-220-3-1 RthJC Symbol Conditions IGB01N12.