IGI60F2727A1L - Infineon

IGI60F2727A1L IPS / 600V GaN half-bridge

IGI60F2727A1L combines a half-bridge power stage consisting of two 270 m (typ. Rdson) / 600 V enhancementmode CoolGaNTM HEMTs with dedicated gate drivers in a small 8 x 8 mm QFN-28 package. In the low-to-medium power area (example application in Figure 1) it is thus ideally suited to support the design of high-density AC/DC chargers and adapters utilizing t.

Features

• Two 270 m GaN switches in half-bridge configuration with dedicated high- and low-side isolated gate drivers - Source / sink driving current up to 1 / 2 A - Application-configurable turn-on and turn-off speed
• Fast input-to-output propagation (typ. 47 ns) with extremely small channel-tochannel mismatch
• PWM input signal (switching frequency up to 3 MHz)
• Standard logic input levels compatible with digital controllers
• Wide supply range
• Single gate driver supply voltage possible (typ. 8 V) with fast UVLO recovery
• Low-side open source for current sensing with external shunt resistor
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