. . . . . 1 Maximum ratings 3 Thermal characteristics .
•Enhancementmodepowertransistor-normallyOFFswitch
•Noreverserecoverycharge
•Reverseconductioncapability
•Lowgatecharge,lowoutputcharge
•QualifiedaccordingtoJEDECfortargetapplications
Potentialapplications
•TelecomAC/DCSynchronousRectifiers
•TelecomDC/DCSynchronousRectifiers
•Robotics
•Batterypoweredtool
•e-Mobility,UAVs
•Wirelesscharging
•ClassDAudio
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
100
V
RDS(on),max
11
mΩ
ID
24
A
Qoss
14
nC
QG
3.4
nC
Qrr
0
nC
Type/OrderingCode IGB110S101
Package PG-VSON-4.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IGB110S10S1 |
Infineon |
Transistor | |
2 | IGB10N60T |
Infineon |
IGBT | |
3 | IGB15N60T |
Infineon Technologies |
IGBT | |
4 | IGB15N65S5 |
Infineon |
IGBT | |
5 | IGB01N120H2 |
Infineon Technologies |
IGBT | |
6 | IGB03N120H2 |
Infineon Technologies |
IGBT | |
7 | IGB070S10S1 |
Infineon |
Transistor | |
8 | IGB20N60H3 |
Infineon |
IGBT | |
9 | IGB20N65S5 |
Infineon |
IGBT | |
10 | IGB30N60H3 |
Infineon |
IGBT | |
11 | IGB30N60T |
Infineon |
IGBT | |
12 | IGB50N60T |
Infineon |
IGBT |