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IFN6450 - InterFET Corporation

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IFN6450 N-Channel JFET

The -300V InterFET IFN6449 and IFN6450 are targeted for high voltage applications. The TO-39 package is hermetically sealed and suitable for military applications. Gate/Case Drain 2 Source TO-39 Bottom View 3 1 Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Volt.

Features


• InterFET N0042SY Geometry
• High Voltage
• Low Input Capacitance: 3pF Maximum
• RoHS Compliant
• SMT, TH, and Bare Die Package options. Applications
• High Voltage Description The -300V InterFET IFN6449 and IFN6450 are targeted for high voltage applications. The TO-39 package is hermetically sealed and suitable for military applications. Gate/Case Drain 2 Source TO-39 Bottom View 3 1 Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage GFS Forward Transconductance IFN6449 Min -100 2 -2 0.5 .

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