IFD89 - InterFET

IFD89 N-Channel JFET

The -15V high gain, low noise InterFET IFND89 comes in several package options and is optimized for low power audio applications. The integrated back to back diodes offers clamping and additional gate leakage. Diode 1 Gate 2 N/C 3 SOT353 (SC70-5) Top View 5 Source 4 Drain Gate Drain 2 Source TO-72 Bottom View 3 4 Diode/Case 1 Product Summary Parameters.

Features

• InterFET N0014EU Geometry
• Low Noise: 5 nV/√Hz Typical
• Low Leakage: 2pA Typical
• Low Ciss: 2.3pF Typical
• RoHS Compliant
• SMT, TH, and Bare Die Package options. Applications
• Hearing Aids
• Mini Microphones
• Infrared Detector Amplifiers
• Battery Powered Amplifiers
• High Gain, Low-Noise Amplifiers
• Replacement for IFND89 Description The -15V high gain, low noise InterFET IFND89 comes in several package options and is optimized for low power audio applications. The integrated back to back diodes offers clamping and additional gate leakage. Diode 1 Gate 2 N/C 3 SOT353 (SC70-5) Top .