IFBF510 - InterFET

IFBF510 N-Channel JFET

The -20V InterFET IFBF510 and IFBF511 are targeted for low noise amplifier stages as well as mixer and oscillator designs. Gate leakages are typically less than 10pA at room temperatures. The TO-72 package is hermetically sealed and suitable for military applications. Gate Drain 2 Source TO-72 Bottom View 3 4 Case 1 Source 1 Drain 2 SOT23 Top View 3 Gate.

Features

• InterFET N0026 Geometry
• Low Noise: 3 nV/√Hz Typical
• Low Ciss: 5.0pF Maximum
• Low Leakage: 10pA Typical
• RoHS Compliant
• SMT, TH, and Bare Die Package options. Applications
• Low Noise High Gain
• Replacement for BF510 and BF511
• Mixers
• Oscillators
• VHF Amplifiers Description The -20V InterFET IFBF510 and IFBF511 are targeted for low noise amplifier stages as well as mixer and oscillator designs. Gate leakages are typically less than 10pA at room temperatures. The TO-72 package is hermetically sealed and suitable for military applications. Gate Drain 2 Source TO-72 Bottom View 3 .