IDT70T651 - Integrated Device Technology

IDT70T651 HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM

feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode. The IDT70T651/9 has a RapidWrite Mode which allows the designer to perform back-to-back write operations without pulsing the R/W input each cycle. This is especially significant at the 8 and 10ns cycle times of the IDT.

Features

◆ ◆ HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE ◆ ◆ ◆ PRELIMINARY IDT70T651/9S ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed access
  – Commercial: 8/10/12/15ns (max.)
  – Industrial: 10/12ns (max.) RapidWrite Mode simplifies high-speed consecutive write cycles Dual chip enables allow for depth expansion without external logic IDT70T651/9 easily expands data bus width to 72 bits or more using the Master/Slave select when cascading more than one device M/S = VIH for BUSY output flag o.