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IDT6167LA - Integrated Device Technology

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IDT6167LA CMOS STATIC RAM

The lDT6167 is a 16,384-bit high-speed static RAM organized as 16K x 1. The part is fabricated using IDT’s highperformance, high reliability CMOS technology. Access times as fast as 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit will automatically go to, and remain in, a standby mode as long as CS r.

Features


• High-speed (equal access and cycle time) — Military: 15/20/25/35/45/55/70/85/100ns (max.) — Commercial: 15/20/25/35ns (max.)
• Low power consumption
• Battery backup operation — 2V data retention voltage (IDT6167LA only)
• Available in 20-pin CERDIP and Plastic DIP, and 20-pin SOJ
• Produced with advanced CMOS high-performance technology
• CMOS process virtually eliminates alpha particle softerror rates
• Separate data input and output
• Military product compliant to MIL-STD-883, Class B DESCRIPTION: The lDT6167 is a 16,384-bit high-speed static RAM organized as 16K x 1. The part is fabric.

The same part from a different manufacturer

Datasheet IDT6167LA - Renesas IDT6167LA

The lDT6167 is a 16,384-bit high-speed static RAM organized E E as 16K x 1. The part is fabricated using IDT’s high-perf.

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