and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, c.
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery/ No forward recovery
• No temperature influence on the switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 5mA2)
Product Summary V DC Qc IF 600 15 6 V nC A
PG-TO220-2-2
thinQ! 2G Diode specially designed for fast switching applications like:
• CCM PFC
• Motor Drives Type IDT06S60C Package PG-TO220-2-2 Marking D06S60C Pin 1 C Pin 2 A
Maximum ratings, at T j=25.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IDT02S60C |
Infineon Technologies |
Schottky Diode | |
2 | IDT03S60C |
Infineon Technologies |
Schottky Diode | |
3 | IDT04S60C |
Infineon Technologies AG |
2nd Generation thinQ SiC Schottky Diode | |
4 | IDT05S60C |
Infineon Technologies AG |
2nd Generation thinQ SiC Schottky Diode | |
5 | IDT08S60C |
Infineon Technologies AG |
2nd Generation thinQ SiC Schottky Diode | |
6 | IDT100494 |
IDT |
HIGH-SPEED BiCMOS ECL STATIC RAM | |
7 | IDT101494 |
IDT |
HIGH-SPEED BiCMOS ECL STATIC RAM | |
8 | IDT10494 |
IDT |
HIGH-SPEED BiCMOS ECL STATIC RAM | |
9 | IDT10S60C |
Infineon Technologies |
2nd Generation thinQ SiC Schottky Diode | |
10 | IDT12S60C |
Infineon Technologies |
2nd Generation thinQ SiC Schottky Diode | |
11 | IDT1337AG |
IDT |
REAL-TIME CLOCK | |
12 | IDT1337G |
Renesas |
REAL-TIME CLOCK |