. ......2 Table of Contents.3 Maximum ratings.
Revolutionary semiconductor material - Silicon Carbide
No reverse recovery current / No forward recovery
Temperature independent switching behavior
Low forward voltage even at high operating temperature
Tight forward voltage distribution
Excellent thermal performance
Extended surge current capability
Specified dv/dt ruggedness
Qualified according to JEDEC1) for target applications
Pb-free lead plating; RoHS compliant
Benefits
System efficiency improvement over Si diodes
System cost / size savings due to reduced cooling requirements
Enabling higher frequency / increas.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IDM02G120C5 |
Infineon |
Diode | |
2 | IDM05G120C5 |
Infineon |
Silicon Carbide Schottky Diode | |
3 | IDM10G120C5 |
Infineon |
Diode | |
4 | IDM15PH5 |
ITW Pancon |
D-Subminiature IDC Metal Shell | |
5 | IDM15PT5 |
ITW Pancon |
D-Subminiature IDC Metal Shell | |
6 | IDM15SH5 |
ITW Pancon |
D-Subminiature IDC Metal Shell | |
7 | IDM15ST5 |
ITW Pancon |
D-Subminiature IDC Metal Shell | |
8 | IDM25PH5 |
ITW Pancon |
D-Subminiature IDC Metal Shell | |
9 | IDM25PT5 |
ITW Pancon |
D-Subminiature IDC Metal Shell | |
10 | IDM25SH5 |
ITW Pancon |
D-Subminiature IDC Metal Shell | |
11 | IDM25ST5 |
ITW Pancon |
D-Subminiature IDC Metal Shell | |
12 | IDM37PH5 |
ITW Pancon |
D-Subminiature IDC Metal Shell |