IAUCN04S6N017T - Infineon

IAUCN04S6N017T Automotive MOSFET

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Features

• OptiMOS™ power MOSFET for automotive applications
• N-channel
  – Enhancement mode
  – Normal Level
• Extended qualification beyond AEC-Q101
• Enhanced electrical testing
• Robust design
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• RoHS compliant
• 100% Avalanche tested
• Top Side Cooling Potential applications General automotive applications. Product validation Qualified for automotive applications. Product validation according to AEC-Q101. Product Summary VDS RDS(on) ID (chip limited) Type IAUCN04S6N017T 40 V 1.73 mΩ 200 A Package PG-LHDSO-10-1 PG-LHDSO-10-1 1 Pins 10 - 6 .