HZS Series SILICON EPITAXIAL PLANER ZENER DIODES for Stabilized Power Supply min. 27.5 Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application. • Suitable for 5mm-pitch speed automatic insertio.
• Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc.
• Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.
• Suitable for 5mm-pitch speed automatic insertion.
White Cathode Band Part No. Black Color
max. 1.9
max. 0.45
Glass case JEDEC DO-34 Dimensions in mm
min. 27.5
max. 2.9
Absolute Maximum Ratings (Ta = 25 OC)
Power Dissipation Junction Temperature Storage Temperature Range
Symbol Ptot Tj TS
Value 400 200 -55 to +175
Unit mW OC OC
РАДИОТЕХ-ТРЕЙД
Тел.: (495) 795-0805 Факс: (495).
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HZS33 |
![]() Renesas |
Silicon Epitaxial Planar Zener Diode |
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2 | HZS33 |
![]() Hitachi |
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
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3 | HZS33-1L |
![]() Renesas |
Silicon Planar Zener Diode |
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4 | HZS33-2L |
![]() Renesas |
Silicon Planar Zener Diode |
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5 | HZS33-3L |
![]() Renesas |
Silicon Planar Zener Diode |
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6 | HZS331 |
![]() SEMTECH |
SILICON EPITAXIAL PLANER ZENER DIODES |
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7 | HZS333 |
![]() SEMTECH |
SILICON EPITAXIAL PLANER ZENER DIODES |
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8 | HZS3 |
![]() Renesas |
Silicon Epitaxial Planar Zener Diode |
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9 | HZS3 |
![]() Hitachi |
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
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10 | HZS30 |
![]() Renesas |
Silicon Epitaxial Planar Zener Diode |
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11 | HZS30 |
![]() Hitachi |
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
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12 | HZS30-1L |
![]() Renesas |
Silicon Planar Zener Diode |
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